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PD - 97335
IRFH7921PBF
Applications
l
HEXFET(R) Power MOSFET
l
High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications
VDSS 30V
RDS(on) max
Qg
8.5m@VGS = 10V 9.3nC
Benefits
l l l l l l l l
Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering
D D D D
S S S G
PQFN
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 20 15 12 34 120 3.1
Units
V
g Power Dissipation g
Power Dissipation
c
A W W/C C
Linear Derating Factor Operating Junction and
g
2.0 0.025 -55 to + 150
Storage Temperature Range
Thermal Resistance
Parameter
RJC RJA Junction-to-Case
f
Typ.
--- ---
Max.
7.9 40
Units
C/W
Junction-to-Ambient
g
Notes through are on page 9
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1
IRFH7921PBF
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss
Static @ TJ = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 27 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.02 7.1 10.4 1.8 -6.2 --- --- --- --- --- 9.3 2.2 1.2 3.2 2.7 4.4 5.0 1.4 12 7.6 14 4.7 1210 240 120 --- --- 8.5 12.5 2.35 --- 1.0 150 100 -100 --- 14 --- --- --- --- --- --- 2.4 --- --- --- --- --- --- --- pF nC nC VDS = 15V VGS = 4.5V ID = 12A V
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A
V/C Reference to 25C, ID = 1mA m V mV/C A nA S
e e
VDS = VGS, ID = 25A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 12A
See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns ID = 12A RG=1.8 See Fig.15 VGS = 0V VDS = 15V = 1.0MHz
Avalanche Characteristics
EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current
d
Typ. --- ---
Max. 29 12
Units mJ A
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 12 11 3.9 A 120 1.0 18 17 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 25C, IF = 12A, VDD = 15V di/dt = 300A/s
e
eA
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH7921PBF
1000 1000
60s PULSE WIDTH
Tj = 25C
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
60s PULSE WIDTH
Tj = 150C 100
TOP
BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
10
1
0.1 2.3V 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
1
2.3V
0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
1.6 ID = 15A 1.4 VGS = 10V
ID, Drain-to-Source Current (A)
100
10
TJ = 150C T J = 25C VDS = 15V 60s PULSE WIDTH 1 2 3 4 5 6
(Normalized)
1.2
1.0
1
0.8
0.1
0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
IRFH7921PBF
10000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
5.0 ID= 12A
VGS , Gate-to-Source Voltage (V)
4.0
VDS= 24V VDS= 15V
C, Capacitance (pF)
Ciss 1000
3.0
2.0
Coss Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100
1.0
0.0 0 2 4 6 8 10 12 Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100 100sec 1msec 10 DC 1 T A = 25C Tj = 150C Single Pulse 0.1 0 1 10 100 10msec
10
T J = 150C
T J = 25C
1 VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFH7921PBF
16
VGS(th) , Gate Threshold Voltage (V)
2.5
14 12
ID, Drain Current (A)
2.0
10 8 6 4 2 0 25 50 75 100 125 150 T J , Junction Temperature (C)
1.5
ID = 25A
1.0
0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
Thermal Response ( Z thJA ) C/W
D = 0.50 10 0.20 0.10 0.05 0.02 0.01
1
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 A 4 A
Ri (C/W)
2.4768 6.6412 15.997 14.892
0.000496 0.014506 0.80399 34.4
i (sec)
0.1 SINGLE PULSE ( THERMAL RESPONSE )
1
2
3
4
Ci= i/Ri Ci= i/Ri
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 0.01 0.1 1 10 100
0.001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH7921PBF
RDS(on), Drain-to -Source On Resistance (m )
20 18 16 14 12 10 8 6 4 0 2 4 6 8 10 12 14 16 18 20 T J = 25C
120
EAS , Single Pulse Avalanche Energy (mJ)
ID = 15A
100 80 60 40 20 0 25 50 75
ID TOP 2.2A 3.1A BOTTOM 12A
T J = 125C
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
V DS V GS
RD
VDS
L
DRIVER
RG V10V GS Pulse Width 1 s Duty Factor 0.1
D.U.T.
+
-V DD
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 15a. Switching Time Test Circuit
90%
VDS
10%
VGS
I AS
td(on)
tr
td(off)
tf
Fig 14b. Unclamped Inductive Waveforms
Fig 15b. Switching Time Waveforms
6
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IRFH7921PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Current Regulator Same Type as D.U.T.
Vds Vgs
Id
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
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7
IRFH7921PBF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL RECTIFIER LOGO 6
DATE CODE
XXXX
ASSEMBLY SITE CODE (Per SCOP 200-002)
PART NUMBER MARKING CODE
(Per Marking Spec.)
XYWWX XXXXX
PIN 1 IDENTIFIER LOT CODE
(Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFH7921PBF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.39mH, RG = 25, IAS = 12A. Pulse width 400s; duty cycle 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/08
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